SMD Type
Transistors
IC
Product specification
2SC3357
Features
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 7.5 dB TYP. @V
CE
= 10 V,
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
High power gain : MAG = 10 dB TYP. @ I
C
= 40 mA, f = 1 GHz
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Thermal Resistance
* mounted on 16 cm X 0.7 mm(t) Ceramic Substrate
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
*
T
j
T
stg
R
th(j-a)
*
Rating
20
12
3.0
100
1.2
150
-65 to +150
62.5
Unit
V
V
V
mA
W
/W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Insertion Power Gain
Noise Figure
Output Capacitance
Transition frequency
*1 Pulse Measurement PW
350 ms, Duty Cycle
Symbol
I
CBO
I
EBO
h
FE
*1
|S
21e
|
2
NF
C
ob
f
T
2%
Testconditons
V
CB
= 10V,I
E
=0
V
EB
= 1.0V,I
C
=0
V
CE
=10V,Ic=20mA
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10V ,Ic=20mA
50
120
9
1.1
1.8
0.65
6.5
3.0
1.0
Min
Typ
Max
1.0
1.0
250
dB
dB
dB
pF
GHz
Unit
A
A
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
h
FE
Classification
Marking
Rank
hFE
RH
RH
20 100
RF
RF
80 160
RE
RE
125 250
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
