Product specification
2SC3360
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
High DC current gain.hFE=90 to 450
+0.1
2.4
-0.1
High voltage V
CEO
=200V
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
200
200
5
100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= 200V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=10V , I
C
= 10mA
V
CE
=10V , I
C
= 50mA
V
CE
=10V , I
C
= 10mA
90
50
0.6
200
200
0.64
0.1
0.8
160
2.8
0.15
1.3
0.3
0.7
0.3
1.2
V
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
100
100
450
Unit
nA
nA
V
CE(sat)
I
C
= 50mA , I
B
= 5mA
V
BE(sat)
I
C
= 50mA , I
B
= 5mA
f
T
C
ob
t
on
t
stg
t
f
V
CE
= 10V , I
E
= -10mA
V
CB
= 30V , I
E
= 0 , f = 1.0MHz
I
C
= 10mA, I
B1
= -I
B2
= 1mA,
V
CC
= 10 V
V
BE(off)
= -2.5V
h
FE
Classification
Marking
hFE
N15
90 180
N16
135 270
N17
200 450
+0.1
0.38
-0.1
0-0.1
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
