SMD Type
Transistors
IC
Product specification
2SC3380
SOT-89
Unit:mm
1.50 ±0.1
■
Features
●
High frequency high voltage amplifier
●
High voltage switch
4.50±0.1
1.80±0.1
1
0.48±0.1
2
3
0.80±0.1
0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1
4.00±0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
300
300
5
100
1
150
-55 to +150
Unit
V
V
V
mA
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current gain
Transition frequency
Output Capacitance
Symbol
Test conditons
Min
300
300
5
1.0
1.5
30
80
4
200
MHz
pF
Typ
Max
Unit
V
V
V
μA
V
V
(BR)CBO
I
C
= 10 μA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, I
B
= 0
V
(BR)EBO
I
E
= 10 μA, I
C
= 0
I
CEO
V
CB
= 250V,I
B
=0
V
CE(sat)
I
C
= 20 mA, I
B
= 2 mA
h
FE
f
T
C
ob
V
CE
=20V,Ic=20mA
V
CE
= 20V ,Ic=20mA
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
■
Marking
Marking
AS
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sales@twtysemi.com
4008-318-123
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