Product specification
2SC3545
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
b
Low Collector to Base Time Constant; C
C
r
b’
= 4 ps TYP.
0.55
High Gain Bandwidth Procuct; f
T
= 2 000 MHz TYP.
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
Low Feedback Capacitance; Cre = 0.48 pF TYP.
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
15
3.0
50
150
125
-65 to +125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constant
Symbol
I
CBO
h
FE
Testconditons
V
CB
= 12 V, I
E
= 0
V
CE
= 10 V, I
C
= 5.0 mA
50
100
Min
Typ
Max
0.1
250
0.5
1.3
2.0
0.48
4
1.0
1.0
V
MHz
pF
ps
Unit
ìA
V
CE(sat)
I
C
= 10 mA, I
B
= 1.0 mA
f
T
C
ob
V
CE
= 10 V, I
E
=-5.0 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
C
C
. r
b’
V
CE
= 10 V, I
E
= -5.0 mA, f = 31.9 MHz
b
h
FE
Classification
Marking
Rank
h
FE
T42
M/P
50 100
T43
L/Q
70 140
T44
K/R
120 250
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
