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2SC3583 参数 Datasheet PDF下载

2SC3583图片预览
型号: 2SC3583
PDF下载: 下载PDF文件 查看货源
内容描述: NF 1.2分贝TYP 。 F = 1.0 GHz的嘎13分贝TYP 。 F = 1.0 GHz的 [NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 1 页 / 91 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
SMD Type
Transistors
IC
Product specification
2SC3583
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
NF 1.2 dB TYP. @f = 1.0 GHz
Ga 13 dB TYP. @f = 1.0 GHz
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Rating
20
10
1.5
65
200
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *1
Gain bandwidth product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
*1.Pulse Measurement PW
Symbol
I
CBO
I
EBO
h
FE
f
T
Cre *2
|
MAG
NF
350ìs, Duty Cycle 2 %
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
E
= 0
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
11
50
100
9
0.35
13
15
1.2
2.5
0.9
Min
Typ
Max
1.0
1.0
250
GHz
pF
dB
dB
dB
Unit
ìA
ìA
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Marking
Rank
h
FE
R33
R33/Q
50 100
R34
R34/R
80 160
R35
R35/S
125 250
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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