SMD Type
Transistors
Product specification
2SC3588-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
High voltage V
CEO
=400V
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *1
Collector current
Total power dissipation
Junction temperature
Storage temperature
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm
2
X0.7mm
T
C
= 25 *2
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
T
T
j
T
stg
Rating
500
400
7
1
0.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Collector Saturation Voltage *
Base Saturation Voltage *
Turn-on Time
Storage Time
Fall Time
* Pulsed: PW
350ìA,Duty Cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
r
Testconditons
V
CB
=400V,I
E
=0
V
EB
=5.0V,I
C
=0
V
CE
=5V,I
C
=50mA
V
CE
=5V,I
C
=300mA
I
C
=300mA,I
B
=60mA
I
C
=300mA,I
B
=60mA
I
C
=0.3A,R
L
=500Ù,V
CC
=150V,
P
W
=50ìs,I
B1
=-I
B2
=0.06A
Duty Cycle 2%
20
10
42
20
0.2
0.85
0.12
2.0
0.35
0.5
1.0
1.0
2.5
1.0
ìs
V
V
Min
Typ
Max
10
10
80
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
M
20 to 40
L
30 to 60
K
40 to 80
3
.8
0
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
