SMD Type
Transistors
IC
Product specification
2SC3606
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Low noise figure, high gain.
NF = 1.1dB, |S
21e
|
2
= 11dB (f = 1 GHz)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
20
12
3
80
40
150
125
-55 to 125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
Transition frequency
Insertion gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
C
re
fT
V
CE
=10 V, I
C
=20 mA
5
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 10 V, I
C
=20mA
V
CB
=10V,I
E
=0,f=1MHz,
30
10
0.7
7
16.5
7.5
11
1
1.1
2
1.15
Min
Typ
Max
1
1
250
Unit
ìA
ìA
V
pF
pF
GHz
dB
dB
dB
dB
|S
21e
|
2
(1) V
CE
=10 V, I
C
=20 mA, f =500 MHz
|S
21e
|
2
(2) V
CE
= 10 V, I
C
= 20 mA, f =1 GHz
NF (1)
NF (2)
V
CE
=10 V, I
C
= 5 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
Noise figure
Marking
Marking
MH
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
