Product specification
2SC3632-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.2
9.70
-0.2
High speed tf
0.5ìs
+0.1
0.80
-0.1
+0.15
0.50
-0.15
High voltage V
CEO
=600V
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *1
Collector current
Total power dissipation
Junction temperature
Storage temperature
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm
2
X0.7mm
T
a
= 25 *2
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
T
T
j
T
stg
Rating
600
600
7
2
1
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
collecotr cutoff current
Emitter cutoff current
DC Current Gain
Collector saturation voltage
Base to saturation voltage
Gain Bandwidth Product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
fT
cob
t
on
t
stg
t
f
Testconditons
V
CB
=600V,IE=0
V
EB
=7V,IC=0
V
CE
=5V,I
C
=100mA
V
CE
=5V,I
C
=100mA
I
C
=400mA,I
B
=80mA
IC=400mA,I
B
=80mA
V
CE
=5V,I
E
=-50mA
V
CB
=10V,I
E
=0A,f=1MHz
I
C
=0.5A,R
L
=500Ù
I
B1
=-I
B2
=0.1A
V
CC
=250V
30
5
55
7
0.35
0.9
30
14
0.1
4.0
0.2
0.5
5.0
0.5
1.0
1.2
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
10
10
120
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
M
30 to 60
L
40 to 80
K
60 to 120
3
.8
0
Features
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
