SMD Type
Transistors
Product specification
2SC3651
Features
High DC current gain
High breakdown voltage
Low colleotor-to- emitter saturation voltage
High V
EBO
(V
EBO
15V)
Very small size making it easy to provide high-density
small-sized hybrid IC's.
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Collector Current (pulse)
Collector Dissipation
Junotion Temperature
storage Temperature
*Mounted on ceramic board (250mm
2
X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
120
100
15
200
300
500
1.3 *
150
-55 to 150
Unit
V
V
V
mA
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
collector cutoff Current
Emitter cutoff current
DC Current Gain
Gain-Bandwidth product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Stauration Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
cob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Testconditons
V
CB
=80V,I
E
=0
V
EB
=10V,I
C
=0
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=100mA
V
CE
=10V,I
C
=10mA
V
CB
=10V,f=1MHz
I
C
=100mA,I
B
=2mA
I
C
=100mA,I
E
=2mA
I
C
=100ìA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10ìA,I
C
=0
500
400
150
6.5
0.15
0.5
MHz
pF
V
V
V
V
V
1000
Min
Typ
Max
0.1
0.1
2000
Unit
ìA
ìA
Marking
Marking
CG
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
