SMD Type
Transistors
Product specification
2SC3728
Features
High hFE=150 to 800.
High collector current (Ic=2A).
High collector dissipation Pc=500mW.
Low V
CE(sat):
V
CE(sat)
=0.17V typ(@Ic=1A,I
B
=50mA).
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
T
j
T
stg
Rating
20
6
12
3
2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
20
6
12
14
16
0.1
0.1
150
350
0.2
40
80
28
800
0.35
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
=10ìA,I
E
=0
V
(BR)EBO
I
E
=10ìA,I
C
=0
V
(BR)CEO
I
C
=5mA,R
BE
=
I
CBO
I
EBO
h
FE
V
CB
=16V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=4V,I
C
=100mA
V
CE(sat)
I
C
=1A,I
B
=50mA
f
T
C
ob
V
CE
=2V,I
E
=-10mA
V
CB
=10V,I
E
=0,f=1MHz
h
FE
Classification
Marking
hFE
YE
150 300
YF
250 500
YG
400 800
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1