SMD Type
Transistors
IC
Product specification
2SC3838K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High transition frequency. (Typ. fT= 1.5GHz)
Small rbb'.Cc and high gain. (Typ. 4ps)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
11
3
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Collector-base time constant
Noise factor
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
I
C
=10
I
C
=1mA
I
E
=10
A
A
Testconditons
Min
20
11
3
0.5
0.5
0.5
56
4
3.5
0.8
1.4
3.2
1.5
180
12
ps
dB
pF
GHz
Typ
Max
Unit
V
V
V
A
A
V
V
CB
=10V
V
EB
=2V
V
CE(sat)
I
C
=10mA,I
B
=5mA
h
FE
r
bb
'.C
c
NF
C
ob
f
T
V
CE
=10V,I
C
=5mA
V
CB
= 10V , I
C
= 10mA , f = 31.8MHz
V
CE
= 6V , I
C
= 2mA , f = 500MHz , R
g
= 50Ù
V
CE
=10V, I
E
=0A, f=1MHz
V
CE
=10V, I
E
=10mA, f=500MHz
h
FE
Classification
Marking
Rank
h
FE
ADN
N
56 to 120
ADP
P
82 to 180
+0.1
0.38
-0.1
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
