SMD Type
Transistors
Diodes
IC
Product specification
2SC4102
Features
High breakdown voltage.(V
CEO
= 120V)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
120
120
5
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=100V
V
EB
=4V
V
CE
=6V, I
C
=2mA
180
Testconditons
Min
120
120
5
0.5
0.5
560
0.5
2.5
140
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CE(sat)
I
C
=10mA, I
B
=1mA
C
ob
f
T
V
CB
=12V, I
E
=0A, f=1MHz
V
CE
=-12V, I
E
= 2mA, f=100MHz
h
FE
Classification
Marking
Rank
hFE
180
TR
R
390
270
TS
S
560
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TYSEMI [ TY Semiconductor Co., Ltd ]
