Product specification
2SC4117
Features
High voltage
High hFE
Low noise
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
120
120
5
100
20
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 120 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
=6 V, I
C
= 2 mA
200
Min
Typ
Max
0.1
0.1
700
0.3
100
3.0
1.0
10
V
MHz
pF
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 10 mA, I
B
= 1 mA
f
T
C
ob
NF
V
CE
= 6 V, I
C
= 1 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
=6 V, I
C
=0.1 mA, f=1kHz,R
G
=10 K
h
FE
Classification
Marking
Rank
hFE
DG
GR
200 400
DL
BL
350 700
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TYSEMI [ TY Semiconductor Co., Ltd ]
