SMD Type
Transistors
IC
Product specification
2SC4118
Features
Excellent hFE linearity : h
FE
(2) = 25 (min) (V
CE
= 6 V, I
C
= 400 mA)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
35
30
5
500
50
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 35 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 6 V, I
C
= 400 mA
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
V
BE
f
T
C
ob
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 6 V, I
C
= 20 mA
V
CB
= 6 V, I
E
= 0, f = 1 MHz
70
25
0.1
0.8
300
7
0.25
1.0
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
240
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
WO
70 140
WY
120 240
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TYSEMI [ TY Semiconductor Co., Ltd ]
