SMD Type
Transistors
Product specification
2SC4173
Features
High gain bandwidth product: f
T
=200MHz min.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
60
40
5
500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 40V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 1V , I
C
= 150mA
75
150
0.25
1.0
200
400
3.5
30
150
180
8.0
Min
Typ
Max
100
100
300
0.75
1.2
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= 10V , I
E
= -20mA
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
V
CC
= 30V ,
I
C
= 150mA ,
I
B1
= -I
B2
= 15mA
h
FE
Classification
Marking
hFE
B12
75 150
B13
100
200
B14
150
300
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
