SMD Type
Transistors
IC
Product specification
2SC4178
Features
Micro package.
High gain bandwidth product.
Low output capacitance.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
20
4
20
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
I
CBO
h
FE
Testconditons
V
CB
= 30V, I
E
=0
V
CE
= 6V , I
C
= 1.0mA
40
90
0.1
400
600
1.0
12
3
Min
Typ
Max
100
180
0.3
V
MHz
pF
ps
dB
Unit
nA
V
CE(sat)
I
C
= 10mA , I
B
= 1.0mA
f
T
C
ob
V
CE
= 6V , I
E
= -1.0mA
V
CE
= 6V , I
E
= 0, f = 1MHz
Cc'rb'b V
CE
= 6V , I
E
= -1.0mA , f = 31.9MHz
NF
V
CE
= 6V , I
E
= -1.0mA , Rg = 50Ù, f =
100MHz
h
FE
Classification
Marking
hFE
F12
40 80
F13
60
120
F14
90
180
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TYSEMI [ TY Semiconductor Co., Ltd ]
