SMD Type
Transistors
IC
Product specification
2SC4179
Features
High gain bandwidth product.
Low output capacitance.
Low noise figure.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
50
30
5
50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= 50V, I
E
=0
V
EB
= 5V, I
C
= 0
V
CE
= 6V , I
C
= 1.0mA
V
CE
= 6V , I
C
= 1.0mA
60
0.65
100
0.70
0.08
150
250
1.9
10
2
2.2
15
4
Min
Typ
Max
0.1
0.1
180
0.75
0.3
V
V
MHz
pF
ps
dB
Unit
ìA
ìA
V
CE(sat)
I
C
= 10mA, I
B
= 1.0mA
f
T
C
ob
V
CE
= 6V, I
E
= -1.0mA
V
CE
= 6V, I
E
= 0, f = 1MHz
Cc'rb'b V
CB
= 6V , I
E
= -10mA , f = 31.9MHz
NF
V
CE
= 6V , I
E
= -1.0mA , Rg = 500Ù, f =
1.0MHz
h
FE
Classification
Marking
hFE
FA3
60 120
FA4
90
180
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
