SMD Type
Transistors
IC
Product specification
2SC4213
Features
High emitter-base voltage: V
EBO
= 25 V (min).
High reverse hFE: Reverse h
FE
= 150 (typ.) (V
CE
= -2 V, I
C
= -4 mA).
Low on resistance: R
ON
= 1Ù (typ.) (I
B
= 5 mA).
High DC current gain: h
FE
= 200 1200.
Small package.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
20
25
300
60
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 50 V, I
E
= 0
V
EB
= 25 V, I
C
= 0
V
CE
= 2 V, I
C
= 4 mA
200
0.042
0.61
30
4.8
160
7
Min
Typ
Max
0.1
0.1
1200
0.1
V
V
MHz
pF
ns
Unit
ìA
ìA
V
CE (sat)
I
C
= 30 A, I
B
= 3 mA
V
BE
f
T
C
ob
ton
V
CE
= 2 V, I
C
= 4 mA
V
CE
= 6 V, I
C
= 4 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Storage time
tstg
500
ns
Fall time
tf
Duty cycle
2%
130
ns
h
FE
Classification
Marking
hFE
AA
200 700
AB
350 1200
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
