SMD Type
Product specification
2SC4409
Features
Low Collector Saturation Voltage: V
CE(sat)
= 0.5V(max)(I
C
= 1A)
High Speed Switching Time: t
stg
= 500ns(typ.)
Small Flat Package
P
C
= 1.0 to 2.0W (mounted on a ceramic substrate)
Complementary to 2SA1681
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on a ceramic board (250 mm
2
x 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
80
50
6
2
0.2
0.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Transition Frequency
Collector Output Capacitance
Turn-ON Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Testconditons
V
CB
= 80V , I
E
= 0
V
EB
= 6V , I
C
= 0
V
CE
= 2V , I
C
= 100mA
V
CE
= 2V , I
C
= 1.5A
I
C
= 1A , I
B
= 0.05A
I
C
= 1A , I
B
= 0.05A
50
100
14
0.1
See Test Circuit
0.5
0.1
ìs
120
40
0.5
1.2
V
V
V
MHz
pF
Min
Typ
Max
0.1
0.1
400
Unit
ìA
ìA
V
(BR)CEO
I
C
= 10mA, I
B
= 0
f
T
C
ob
t
on
t
stg
t
f
V
CE
= 2V , I
C
= 100mA
V
CB
= 10V , I
E
= 0, f = 1MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3
TYSEMI [ TY Semiconductor Co., Ltd ]
