SMD Type
Transistors
IC
Product specification
2SC4413
Features
Adoption of FBET process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Small Cob.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
60
50
15
100
200
20
150
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 40V, I
E
=0
V
EB
= 10V, I
C
=0
V
CE
= 5V , I
C
= 10mA
V
CE
= 10V , I
C
= 10mA
V
CB
= 10V, f = 1MHz
800
1500
200
1.5
0.1
0.8
60
50
15
0.5
1.1
Min
Typ
Max
0.1
0.1
3200
MHz
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= 50mA , I
B
= 1mA
V
BE(sat)
I
C
= 50mA , I
B
= 1mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
Marking
Marking
GY
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TYSEMI [ TY Semiconductor Co., Ltd ]
