SMD Type
Transistors
Product specification
2SC4497
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Low saturation voltage.
Small collector output capacitance.
+0.1
1.3
-0.1
High voltage.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
300
300
6
100
20
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 300 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
300
300
30
20
0.5
1.2
70
3
4
V
V
MHz
pF
150
Min
Typ
Max
0.1
0.1
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= 0.1 mA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, I
B
= 0
h
FE
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 1mA
V
CE (sat)
I
C
= 20 mA, I
B
= 2 mA
V
BE (sat)
I
C
= 20 mA, I
B
= 2 mA
f
T
C
ob
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 20 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
3R
R
30 90
3O
O
50 150
+0.1
0.38
-0.1
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
