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2SC4505 参数 Datasheet PDF下载

2SC4505图片预览
型号: 2SC4505
PDF下载: 下载PDF文件 查看货源
内容描述: 高击穿电压。 ( BVCEO = 400V ),低饱和电压 [High breakdown voltage. (BVCEO = 400V) Low saturation voltage]
分类和应用:
文件页数/大小: 2 页 / 132 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4505的Datasheet PDF文件第2页  
SMD Type
Transistors
Product specification
2SC4505
Features
High breakdown voltage. (B
VCEO
= 400V)
Low saturation voltage,
typically V
CE (sat)
= 0.05V at I
C
/ I
B
= 10mA / 1mA.
High switching speed, typically tf = 1.7ìs at Ic =100mA.
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
400
400
7
0.1
0.2
CollectorPower Dissipation
Junotion Temperature
storage Temperature
*1 Single pulse pw=20ms,Duty=1/2
*2 When mounted on a 40X40X0.7 mm ceramic board.
P
C
T
J
T
stg
0.5
2
150
-55 to 150
Unit
V
V
V
A
A *1
W *2
W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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