Product specification
2SC4618
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Unit: mm
■
Features
●
Low collector capacitance.
●
Low rbb, high gain, and excellent noise characteristics.
2
+0.01
0.1
-0.01
1
+0.15
1.6
-0.15
0.55
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
40
25
5
50
0.15
150
-55 to +150
Unit
V
V
V
mA
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=24V
V
EB
=3V
Test conditons
Min
40
25
5
0.5
0.5
0.3
82
300
1.3
2.2
180
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
V
V
CE(sat)
I
C
/I
B
=10mA/1mA
h
FE
f
T
C
ob
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
E
=-1mA, f=100MHz
V
CE
=6V, I
E
=0A, f=1MHz
■
Marking
Marking
AN
AP
AQ
+0.05
0.8
-0.05
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TYSEMI [ TY Semiconductor Co., Ltd ]
