SMD Type
Transistors
IC
Product specification
2SC4667
Features
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: V
CE (sat)
= 0.3 V (max)
High speed switching time: t
stg
= 15 ns (typ.)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
15
5
200
40
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CB
= 40 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 10 mA
40
Testconditons
Min
Typ
Max
0.1
0.1
240
0.3
1.0
200
400
4
70
15
30
6
V
V
MHz
pF
ns
ns
ns
Unit
ìA
ìA
V
CE (sat)
I
C
= 20 mA, I
B
= 1 mA
V
BE (sat)
I
C
= 20 mA, I
B
= 1 mA
f
T
C
ob
ton
tstg
tf
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
R
40 80
CH
O
70 140
Y
120 240
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TYSEMI [ TY Semiconductor Co., Ltd ]
