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2SC4684 参数 Datasheet PDF下载

2SC4684图片预览
型号: 2SC4684
PDF下载: 下载PDF文件 查看货源
内容描述: 高直流电流增益。低集电极饱和电压。高功率耗散。 [High DC current gain. Low collector saturation voltage. High power dissipation.]
分类和应用:
文件页数/大小: 1 页 / 80 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
SMD Type
SMD Type
Transistors
Transistors
IC
Product specification
2SC4684
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
High DC current gain.
+0.2
9.70
-0.2
Low collector saturation voltage.
High power dissipation.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Base current
Collector power dissipation
T
a
= 25
T
c
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
CES
V
EBO
I
C
I
CP
I
B
P
C
Rating
50
20
40
8
5
8
0.5
1.0
10
150
-55 to +150
Unit
V
V
V
V
A
A
A
W
W
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
h
FE
Testconditons
V
CB
= 50 V, I
E
= 0
V
EB
= 8 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 4 A
V
CE (sat)
I
C
= 4 A, I
B
= 40 mA
V
BE
f
T
C
ob
V
CE
= 2 V, I
C
= 4 A
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
150
45
20
800
250
0.5
1.2
V
V
MHz
pF
3200
Min
Typ
Max
100
100
Unit
nA
nA
V
Marking
Marking
C4684
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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