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2SC4695 参数 Datasheet PDF下载

2SC4695图片预览
型号: 2SC4695
PDF下载: 下载PDF文件 查看货源
内容描述: 采用FBET过程。小通阻抗[罗恩= 1W ( IB = 5毫安)。 [Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].]
分类和应用:
文件页数/大小: 2 页 / 196 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4695的Datasheet PDF文件第2页  
SMD Type
SMD Type
IC
Product specification
2SC4695
SOT-23
Unit: mm
Adoption of FBET process.
+0.1
2.4
-0.1
High DC current gain.
High V
EBO
(V
EBO
25V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
High reverse h
FE
(150 typ).
Small ON resistance [R
on
=1W (I
B
=5mA)].
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
50
20
25
500
800
100
250
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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