SMD Type
Transistors
Product specification
2SC4702
SOT-23
Unit: mm
Features
High breakdown voltage
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Small Cob
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
V
CEO
= 300 V
C
ob
= 1.5 pF Typ.
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
300
300
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
DC current gain
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
300
300
5
0.1
0.5
60
80
1.5
150
MHz
pF
Typ
Max
Unit
V
V
V
ìA
V
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
I
CBO
V
CB
= 250V, I
E
=0
V
CE(sat)
I
C
= 30mA , I
B
= 3mA
h
FE
f
T
Cob
V
CE
= 6V , I
C
= 2mA
V
CE
= 6V , I
C
= 5mA
V
CB
= 10V , I
E
=0, f = 1MHz
Marking
Marking
XV-
+0.1
0.38
-0.1
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
