SMD Type
Transistors
Product specification
2SC4942
Features
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
*1 PW
10 ms, duty cycle
50 %
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
I
D(pulse)
*1
P
T
*2
T
j
T
stg
Rating
600
600
7
1
2
2
150
-55 to 150
Unit
V
V
V
A
A
W
*2 7.5 cm
2
X 0.7 mm ceramic board mounted
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
ON
t
stg
t
f
Testconditons
V
CB
= 600 V, I
E
= 0
V
EB
= 7.0 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 0.1 A
V
CE
= 5.0 V, I
C
= 0.5 A
I
C
= 400 mV, I
B
= 80 mA
I
C
= 400 mV, I
B
= 80 mA
V
CE
= 5.0 V, I
E
= ?50 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 0.5 A, V
CC
= 250 V
I
B1
= ?I
B2
= 0.1 A
R
L
= 500Ù
30
5
55
10
0.35
0.9
30
15
0.1
4.0
0.2
0.5
5.0
0.5
1.0
1.2
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
10
10
120
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
AA1
30 to 60
AA2
40 to 80
AA3
60 to120
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
