SMD Type
SMD Type
Transistors
IC
Product specification
2SC5212
Features
Low collector saturation voltage V
CE(sat)
=0.2V typ.
High f
T
f
T
=180MHz typ.
Excellent linearity of dc forward current gain.
High collector current I
CM
=1A.
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
EBO
V
CEO
I
CM
I
C
P
C
T
j
T
stg
Rating
25
4
20
1
700
500
150
-55 to +150
Unit
V
V
V
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
Min
25
4
20
1
1
150
0.2
180
800
0.5
V
MHz
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
=10ìA,I
E
=0
V
(BR)EBO
I
E
=10ìA,I
C
=0
V
(BR)CEO
I
C
=100ìA,R
BE
=
I
CBO
I
EBO
h
FE
V
CB
=25V,I
E
=0
V
EB
=2V,I
C
=0
V
CE
=4V,I
C
=100mA
V
CE(sat)
I
C
=500mA,I
B
=25mA
f
T
V
CE
=6V,I
E
=-10mA
h
FE
Classification
Marking
hFE
UE
150 300
UF
250 500
UG
400 800
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
