SMD Type
Transistors
IC
Product specification
2SC5342UF
Features
Large collector current : I
C
=500mA
Low collector saturation voltage enabling low-voltage operation
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
40
32
5
500
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Testconditons
I
C
=100ìA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10ìA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
70
Min
40
32
5
0.1
0.1
240
0.25
300
7
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=100mA, I
B
=10mA
f
T
C
ob
V
CE
=6V, I
E
=-20mA
V
CB
=6V, I
E
=0, f=1MHz
h
FE
Classification
Marking
Rank
hFE
O
70 140
B
Y
120 240
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TYSEMI [ TY Semiconductor Co., Ltd ]
