SMD Type
Transistors
IC
Product specification
2SC5343SF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
Low output capacitance:C
ob
=2pF(Typ.)
+0.1
1.3
-0.1
Low collector saturation voltage: V
CE
=0.25V(Max.)
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
60
50
5
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise figure
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
IC
=100ìA
Testconditons
, I
E
=0
Min
60
50
5
0-0.1
Typ
Max
Unit
V
V
V
I
C
=1mA , I
B
=0
I
E
=10ìA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
0.1
0.1
70
700
0.25
80
2
3.5
10
ìA
ìA
V
CE(sat)
I
C
/I
B
=100mA/10mA
f
T
C
ob
NF
V
CE
=10V, I
C
=1mA,
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, f=1KHz, R
g
=10kÙ
V
MHz
pF
dB
h
FE
Classification
Marking
Rank
hFE
O
70 140
Y
120 240
DA
G
200 400
L
300 700
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
