SMD Type
Transistors
Product specification
2SC5356
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
High collectors breakdown voltage: V
CEO
= 800 V
High DC current gain: h
FE
= 15 (min) (I
C
= 0.15 A)
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ( DC)
Collector current (Pulse)
Base current
Collector power dissipation
Ta = 25
T
C
= 25
Junction temperature
Storage temperature range
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
900
800
7
3
5
1
1.5
25
150
-55 to +150
A
W
Unit
V
V
V
A
3
.8
0
Excellent switching times: t
f
= 0.5 ìs (max) (I
C
= 1.2 A)
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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