Product specification
2SC5457
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
+0.2
9.70
-0.2
+0.15
0.50
-0.15
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
+0.1
0.80
-0.1
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation T
C
= 25
Ta = 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
Rating
500
500
400
7
6
3
1.2
30
1
150
-55 to +150
Unit
V
V
V
V
A
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Testconditons
V
CB
= 500V, I
E
= 0
V
EB
= 5V,
IC
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.2A, f = 1MHz
I
C
= 1.5A, I
B1
= 0.15A, I
B2
=-0.3A,
V
CC
= 200V
10
1.0
3.0
0.3
ìs
400
10
8
40
1
1.5
V
MHz
Min
Typ
Max
100
100
Unit
ìA
ìA
V
V
3
.8
0
High-speed switching
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TYSEMI [ TY Semiconductor Co., Ltd ]
