SMD Type
Transistors
IC
Product specification
2SC5585
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Unit: mm
+0.01
0.1
-0.01
2
1
+0.15
1.6
-0.15
Low V
CE(sat)
:V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA
3
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
15
12
6
500
150
150
-55 to +125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
c
ob
f
T
I
C
= 10
I
C
= 1mA
I
E
= 10
A
A
Testconditons
Min
15
12
6
100
100
270
90
7.5
320
680
250
mV
pF
MHz
Typ
Max
Unit
V
V
V
nA
nA
V
CB
=15 V
V
EB
= 6 V
V
CE
= 2 V, I
C
= 10mA
I
C
=200mA,I
B
=10mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
= 2V, I
E
=-10mA,f=100MHz
Marking
Marking
BX
+0.05
0.8
-0.05
Hig current.
0.55
Features
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
