Product specification
2SC945
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
2
●
High h
FE
linearity
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
●
Collector current up to 150mA
+0.1
1.3
-0.1
■
Features
0.4
3
+0.05
0.1
-0.01
0.97
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
60
50
5
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Collector to base capacitance
Noise figure
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
NF
f
T
Testconditons
I
C
=100 μA, I
E
=0
I
C
=1mA , I
B
=0
I
E
=100 μA, I
C
=0
V
CB
= 60V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 6.0V, I
C
=1.0mA
V
CE
= 6.0V, I
C
=0.1mA
I
C
=100mA,I
B
=10mA
I
C
=100mA,I
B
=10mA
V
CB
= 10 V, I
E
= 0 , f = 1 MHz
V
CE
=6V,I
C
=0.1mA,R
g
=10kΩ,f=1kMHZ
V
CE
=6V,I
C
=10mA,f =30 MHz
150
4
130
40
0.3
1.0
3.0
10
V
V
pF
dB
MHz
Min
60
50
5
0.1
0.1
400
Typ
Max
Unit
V
V
V
μA
μA
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.1
0.38
-0.1
0-0.1
+0.1
-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
