SMD Type
Transistors
IC
Product specification
2SD1005
Features
World standard miniature package: SOT-89.
High collector to base voltage: V
CBO
100V.
Excellent dc current gain linearity: h
FE
=80TYP. (V
CE
=2V, I
C
=500mA).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Total power dissipation
at 25
ambient temperature *
T
j
T
stg
150
-55 to +150
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
Rating
100
80
5
1
1.5
2
Unit
V
V
V
A
A
W
Junction temperature
Storage temperature
*1. PW
10ìs,duty cycle 50%
*2. When mounted on ceramic substrate of 16cm
2
X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 100V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=2V , I
C
= 100mA
V
CE
=2V , I
C
= 500mA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE
f
T
C
ob
V
CE
=10V , I
C
= 10mA
V
CE
= 5V , I
E
= -10mA
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
600
90
25
200
80
0.15
0.9
630
160
12
0.5
1.5
700
V
V
mV
MHz
pF
Min
Typ
Max
100
100
400
Unit
nA
nA
h
FE
Classification
Marking
hFE
BW
90 180
BV
135 270
BU
200 400
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
