SMD Type
Transistors
IC
Product specification
2SD1033
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
High Voltage V
CEO
=150V
+0.2
9.70
-0.2
+0.15
0.50
-0.15
+0.15
5.55
-0.15
+0.1
0.80
-0.1
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *1
Collector current
Collector power dissipation Ta = 25
Junction temperature
Storage temperature
* PW
10ms,Duty Cycle 50%
*2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
T
T
j
T
stg
Rating
200
150
5
3
2
2
150
-55 to +150
Unit
V
V
V
A
A
W
*2 when mounted on ceramic substrate of 7.5cm
2
X0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC Current Gain *
Collector saturation voltage *
Gain saturation Voltage
* PW
350ìs,Duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
fT
Testconditons
V
CB
= 150V, I
E
= 0
V
EB
= 4V,
IC
= 0
V
CE
=10V,I
C
=0.4A
I
C
= 500mA, I
B
= 0.4A
V
CE
=10V,I
E
=0.4A
40
100
0.2
10
Min
Typ
Max
50
50
200
1.0
V
MHZ
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
M
40 to 80
L
60 to 120
K
100 to 200
3
.8
0
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
