SMD Type
Transistors
Product specification
2SD1257,2SD1257A
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
Low collector-emitter saturation voltage V
CE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
Large collector current I
C.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
2SD1257
2SD1257A
Collector-emitter voltage
2SD1257
2SD1257A
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Ta = 25
V
EBO
I
C
I
CP
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
130
150
80
100
7
7
15
1.3
40
Junction temperature
Storage temperature
150
-55 to +150
Unit
V
V
V
V
V
A
A
W
W
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
