SMD Type
Transistors
Product specification
2SD1259;2SD1259A
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
Features
Satisfactory linearity of forward current transfer ratio hFE.
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
2SD1259
2SD1259A
Collector-emitter voltage
2SD1259
2SD1259A
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation
Ta = 25
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
80
100
60
80
6
3
6
1
1.3
40
Junction temperature
Storage temperature
150
-55 to +150
Unit
V
V
V
V
V
A
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
2SD1259
2SD1259A
Collector-base cutoff current
2SD1259
2SD1259A
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
I
CEO
I
EBO
h
FE
I
CBO
V
CB
= 80 V, I
E
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 40 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 4 V, I
C
= 0.5 A
500
Symbol
V
CEO
Testconditons
I
C
= 25 mA, I
B
= 0
Min
60
80
100
100
100
100
2500
1.0
50
V
MHz
Typ
Max
Unit
V
V
ìA
ìA
ìA
ìA
V
CE(sat)
I
C
= 2 A, I
B
= 0.05 A
f
T
V
CE
= 12 V, I
C
= 0.2 A, f = 10 MHz
h
FE
Classification
Rank
h
FE
Q
500 1000
P
800 1500
O
1200 2500
3
.8
0
High forward current transfer ratio hFE.
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TYSEMI [ TY Semiconductor Co., Ltd ]
