SMD Type
Transistors
IC
Product specification
2SD1328
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
Low ON resistance Ron.
Low collector-emitter saturation voltage V
CE(sat)
.
High foward current transfer ratio hFE.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
25
20
12
1
0.5
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Testconditons
V
CB
= 25 V, I
E
= 0
I
C
= 10 ìA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CE
= 2 V, I
C
= 0.5 A
25
20
12
200
0.13
800
0.4
1.2
200
10
V
V
MHz
pF
Min
Typ
Max
100
Unit
nA
V
V
V
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA
V
BE(sat)
I
C
= 0.5 A, I
B
= 50 mA
f
T
C
ob
V
CB
= 10 V, I
E
= -50 mA , f = 200 MHz
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
ON resistanse
R
on
0-0.1
1.0
Ù
h
FE
Classification
Marking
Rank
h
FE
R
200 350
1D
S
300 500
T
400 800
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TYSEMI [ TY Semiconductor Co., Ltd ]
