Product specification
2SD1366A
SOT-89
Unit:mm
1.50 ±0.1
■
Features
●
Low frequency power amplifier
4.50±0.1
1.80±0.1
1
0.48±0.1
2
3
0.80±0.1
0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1
4.00±0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
30
25
5
1
1
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
Test conditons
Min
30
25
5
0.1
0.1
85
240
0.3
1
240
22
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
V
(BR)CBO
I
C
= 10 μA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, I
B
= 0
V
(BR)EBO
I
E
= 10 μA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= 250V,I
B
=0
V
EB
= 4 V, I
C
= 0
V
CE
=2V,Ic=500mA
V
CE(sat)
I
C
= 0.8 A, I
B
= 80mA
V
BE(sat)
I
C
= 0.8 A, I
B
= 80mA
f
T
C
ob
V
CE
= 2V ,Ic=500mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
■
h
FE
Classification
Marking
h
FE
AC
82½180
AD
120½240
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TYSEMI [ TY Semiconductor Co., Ltd ]
