SMD Type
Transistors
Product specification
2SD1367
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
*
2
Tj
T
stg
Rating
20
16
6
2
3
1
150
-55 to +150
Unit
V
V
V
A
A
W
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
20
16
6
0.1
0.1
100
0.15
0.9
100
20
500
0.3
1.2
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= 10 ìA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, R
BE
=
V
(BR)EBO
I
E
= 10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= 16 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V,I
C
= 0.1 A
V
CE(sat)
I
C
= 1 A,I
B
= 0.1 A
V
BE(sat)
I
C
= 1 A,I
B
= 0.1 A
f
T
C
ob
V
CE
= 2 V,I
C
= 10 mA
V
CB
= 10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
hFE
BA
100 200
BB
160 320
BC
250 500
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