SMD Type
Transistors
Product specification
2SD1368
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
*
2
Tj
T
stg
Rating
100
50
6
1
1.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
100
50
6
0.1
0.1
100
500
0.3
1.2
100
20
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= 10 ìA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, R
BE
=
V
(BR)EBO
I
E
= 10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= 80 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 2 V,I
C
= 0.1 A
V
CE(sat)
I
C
= 1 A,I
B
= 0.1 A
V
BE(sat)
I
C
= 1 A,I
B
= 0.1 A
f
T
C
ob
V
CE
= 2 V,I
C
= 10 mA
V
CB
= 10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
hFE
CA
100 200
CB
160 320
CC
250 500
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TYSEMI [ TY Semiconductor Co., Ltd ]
