SMD Type
Transistors
Product specification
2SD1419
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Testconditons
I
C
= 10 ìA, I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10 ìA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 150 mA*
V
CE
= 5 V, I
C
= 500 mA*
I
C
= 500 mA, I
B
= 50 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
CE
= 5 V, I
C
= 150 mA*
V
CB
= 10 V, I
E
= 0, f = 1 MHz
140
12
60
30
1
1.5
V
V
MHz
pF
Min
120
100
5
10
200
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
Marking
hFE
DD
60 120
DE
100 200
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TYSEMI [ TY Semiconductor Co., Ltd ]
