SMD Type
Transistors
Product specification
2SD1421
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 PW
10ms, duty cycle 20%
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*1
P
C
*2
T
j
T
stg
Rating
180
160
5
1.5
3
1
150
-55 to 150
Unit
V
V
V
A
A
W
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
Testconditons
I
C
= 1 mA, I
E
= 0
I
C
= 10mA, R
BE
=
I
E
= 1mA, I
C
= 0
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 0.15A
V
CE
= 5 V, I
C
= 0.5A
I
C
= 0.5A, I
B
= 50 mA,pulse
V
CE
= 5 V, I
C
= 0.15mA,pulse
60
30
1.0
0.9
V
V
Min
180
160
5
10
200
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
Marking
hFE
ED
60 120
EE
100 200
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