SMD Type
Transistors
IC
Product specification
2SD1484K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High current.(I
C
=5A).
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Features
Low saturation voltage, typically V
CE(sat)
=0.1V at I
C
/ I
B
=150mA / 15mA.
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
50
50
5
0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=100ìA
I
C
=1mA
I
E
=100ìA
V
CB
=30V
V
EB
=4V
Testconditons
Min
50
50
5
0.5
0.5
0.4
120
250
6.5
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=150mA/15mA
h
FE
f
T
C
ob
V
CE
=3V, I
C
=0.01A
V
CE
=5V, I
E
= -20mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
hFE
YQ
120 270
YR
180 390
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
