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2SD1611 参数 Datasheet PDF下载

2SD1611图片预览
型号: 2SD1611
PDF下载: 下载PDF文件 查看货源
内容描述: 高正向电流传输比的hFE高集电极 - 基极电压(发射极开路) VCBO [High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO]
分类和应用:
文件页数/大小: 2 页 / 105 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SD1611的Datasheet PDF文件第2页  
SMD Type
Transistors
Product specification
2SD1611
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
Features
+0.2
9.70
-0.2
High forward current transfer ratio h
FE
High collector-base voltage (Emitter open) V
CBO
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Internal Connection
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Ta = 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
500
400
5
6
10
40
1.3
150
-55 to +150
Unit
V
V
V
A
A
A
W
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