SMD Type
Transistors
Product specification
2SD1618
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
Testconditons
V
CB
= 15V , I
E
= 0
V
CB
= 4V , I
E
= 0
V
CE
= 2V , I
C
= 50mA
V
CE
= 2V , I
C
= 500mA
V
CE
= 10V , I
C
= 50mA
I
C
= 5mA , I
B
= 0.5mA
I
C
= 100mA , I
B
= 10mA
V
BE(sat)
I
C
= 100mA , I
B
= 10mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
C
ob
V
CB
= 10V , f = 1MHz
20
15
5
8
140
60
250
10
30
0.8
25
80
1.2
MHz
mV
mV
V
V
V
V
pF
Min
Typ
Max
0.1
0.1
560
Unit
ìA
ìA
h
FE
Classification
Marking
Rank
hFE
S
140 280
DA
T
200 400
U
280 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
