SMD Type
Transistors
Product specification
2SD1619
Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C *
T
j
T
stg
Rating
25
25
5
1
2
500
1.3
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 20 V, I
E
=0
V
EB
= 4 V, I
C
=0
V
CE
= 2 V , I
C
= 50 mA
V
CE
= 10 V , I
C
= 50 mA
V
CB
= 10 V , f = 1.0MHz
100
180
15
0.1
0.85
25
25
5
0.3
1.2
Min
Typ
Max
0.1
0.1
560
MHz
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= 500 mA , I
B
= 50 mA
V
BE(sat)
I
C
= 500 mA , I
B
= 50 mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
h
FE
Classification
Marking
Rank
hFE
R
100 200
S
140 280
DB
T
200 400
U
280 560
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
