SMD Type
Transistors
Product specification
2SD1719
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
+0.2
9.70
-0.2
High forward current transfer ratio h
FE
which has satisfactory linearity
High emitter-base voltage (Collector open) V
EBO
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
100
60
15
6
12
3
40
1.3
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE
Testconditons
I
C
= 25 mA, I
B
= 0
V
CB
= 100 V,I
E
= 0
V
EB
= 15 V, I
C
= 0
V
CE
= 4 V, I
C
= 1 A
300
Min
60
100
100
2000
0.5
30
0.3
I
C
= 5 A,I
B1
= -I
B2
= 0.1 A, V
CC
= 50V
1.5
0.6
V
MHz
ìs
ìs
ìs
Typ
Max
Unit
V
ìA
ìA
V
CE(sat)
I
C
= 5 A, I
B
= 0.1 A
f
T
t
on
t
stg
t
f
V
CE
= 12 V, I
C
= 0.5 A , f = 10 MHz
h
FE
Classification
Rank
h
FE
Q
300 1200
P
800 2000
3
.8
0
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TYSEMI [ TY Semiconductor Co., Ltd ]
